Development of Large Diameter Silicon Carbide Substrate and Epitaxial Processes | Apply Online

Frequently Asked Questions (FAQs)

What is this Department of Defense (DoD) / AFRL opportunity about?

This is a sources-sought notice from the Air Force Research Laboratory (AFRL) exploring a potential cooperative agreement to improve silicon carbide (SiC) substrate and SiC epitaxial growth capabilities that enable next-generation Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) for high-power radio-frequency (RF) systems.

Is this a request for proposals (RFP) or a sources-sought / market research notice?

It is described as a sources-sought synopsis, which is typically used to survey industry and research capabilities and to help shape a future solicitation rather than to directly solicit full proposals.

What technology area is AFRL trying to advance?

The focus is on advancing (1) large-diameter, high-quality, semi-insulating SiC substrates and (2) reliable SiC homo-epitaxial growth services with tight control of doping and thickness. The improvements are intended to support both GaN RF electronics (GaN-on-SiC) and SiC power electronics.

Why is silicon carbide (SiC) important for GaN RF devices?

AFRL highlights that GaN RF devices used in demanding, high-power RF applications rely heavily on high-quality, semi-insulating SiC substrates. Better SiC material quality and consistency can translate into improved GaN device performance, better manufacturability, and more scalable supply.

What does "semi-insulating SiC substrate" mean in this context, and why does it matter?

Semi-insulating behavior is emphasized as particularly important for RF GaN HEMTs because it helps minimize parasitic conduction paths and RF losses. This improves isolation and can increase overall device efficiency in high-power RF systems.

What improvements to SiC substrates is AFRL looking for?

AFRL is signaling interest in advancements that enable larger wafer diameters while maintaining the electrical and structural quality required for high-performance devices. The notice also points to needs around affordability, consistency, lower defect densities, and scaling to larger diameters without sacrificing properties required for RF and power electronics.

What is the epitaxy need described in the notice?

AFRL calls out the need for SiC homo-epitaxial growth (SiC layers grown on SiC substrates) with very tight control of doping and thickness. This is tied to fabrication needs for SiC power devices and emphasizes repeatable, well-controlled processes.

What thickness range for SiC epitaxial layers is mentioned?

The notice states that SiC epitaxial layers can range from only a few microns to roughly 100 microns, depending on the device design and voltage rating.

Why are doping control and uniformity important for SiC epitaxy?

AFRL indicates that power device performance, breakdown voltage, on-resistance, and long-term reliability are strongly influenced by doping uniformity, impurity levels, and defect propagation during growth. Tight control and repeatability are therefore central needs.

What does AFRL mean by wanting a "pure play supplier"?

The notice references a "pure play supplier" to underscore interest in an industrially viable, specialized supply chain capability for SiC epitaxy services, rather than relying only on vertically integrated device manufacturers.

What applications are motivating this work?

The technical motivation described includes high-power RF systems using GaN-on-SiC (for high power density and efficiency) and SiC power electronics (for higher voltage, higher current, and higher switching frequency capability compared to silicon). The opportunity frames these as military-relevant RF applications and broader power electronics needs.

What gaps or barriers is AFRL trying to address?

AFRL identifies gaps in cost, quality, and scalable supply of SiC substrates and epitaxial layers. The notice suggests that wide bandgap advantages are only fully realized when SiC materials are high quality, available in larger diameters, and affordable enough to support broader deployment and manufacturing scale.

What is the funding instrument for this potential award?

The listing identifies a cooperative agreement as the funding instrument.

Is this opportunity discretionary, and what CFDA is associated with it?

It is listed as a discretionary opportunity under CFDA 12.800 (research and development).

Who is eligible to respond?

Eligibility is described as unrestricted, meaning a wide range of organizations may respond, subject to any additional constraints that could appear in a full notice.

What is the funding opportunity number?

The funding opportunity number is RFI AFRL RQKS 2016 0002.

When was the notice posted, and what is the closing date?

The notice was posted on March 18, 2016, and the closing date is April 18, 2016.

How many awards are anticipated and what is the stated award ceiling?

The listing includes an anticipated profile of up to one award, with an award ceiling of $13,500,000.

Does the notice focus only on GaN RF devices, or also on SiC power devices?

Both are discussed. The substrate improvements are framed as critical for GaN RF HEMTs (GaN-on-SiC), while the epitaxy discussion explicitly ties to fabrication needs for SiC power devices.

What kinds of outcomes is AFRL implicitly trying to enable?

Based on the description, AFRL is aiming for more consistent, lower-defect, larger-diameter semi-insulating SiC substrates and highly controlled, repeatable SiC epitaxial growth services, in order to improve device performance and manufacturability and to strengthen scalable, affordable supply.