Opportunity Information: Apply for BAA 12 03 PKM
Apply for BAA 12 03 PKM
- The Air Force Research Lab in the science and technology and other research and development sector is offering a public funding opportunity titled "GaN on SiC Advanced EW MMIC Production Capacity Project" and is now available to receive applicants.
- Interested and eligible applicants and submit their applications by referencing the CFDA number(s): 12.800 Air Force Defense Research Sciences Program.
- This funding opportunity was created on Mar 7, 2012 and posted on Mar 7, 2012.
- Applicants must submit their applications by Apr 23, 2012. (Agency may still review applications by suitable applicants for the remaining/unused allocated funding in 2026.)
- The funding agency has allocated a total of $8,500,000.00 to eligible and selected applicants.
- The number of recipients for this funding is limited to 1 candidate(s).
- Eligible applicants include: Unrestricted (i.e., open to any type of entity above), subject to any clarification in text field entitled Additional Information on Eligibility.
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Opportunity Summary:
The GaN on SiC Advanced EW MMIC Production Capacity Project was a U.S. Air Force Research Laboratory funding opportunity issued under the Defense Production Act (DPA) Title III program to build up a domestic manufacturing base for advanced microwave chips used in electronic warfare (EW). The central goal was to stand up a U.S.-based, economically viable production capability for high-frequency, wide-bandwidth monolithic microwave integrated circuits (MMICs) operating in the 32 to 38 GHz range. These MMICs were to be based on gallium nitride (GaN) epitaxy grown on silicon carbide (SiC) substrates, specifically using 100 mm (4-inch) SiC wafers, which matters because wafer size is closely tied to throughput, cost, and manufacturing maturity.
A defining requirement of the project was that the resulting capability function as an "open foundry" merchant supplier. In practical terms, that means the awardee was expected to offer its fabrication process to outside organizations (not just internal product lines), allowing external customers to design and manufacture their own chips using the foundry's qualified process. The solicitation points to a key sign that a foundry is truly "open": the availability of a robust process design kit (PDK). The PDK is the bridge between manufacturing and design, capturing design rules, device models, layout constraints, and process details in a way that enables external designers to produce working chips with minimal redesign cycles, ideally achieving acceptable performance on the first fabrication run.
From a technology standpoint, the program targeted GaN-on-SiC because it is widely valued for high-power, high-frequency RF applications. GaN devices can support high power densities and operate effectively at microwave and millimeter-wave frequencies, while SiC substrates help with thermal conductivity and power handling, both of which are critical in demanding EW environments. By emphasizing wide bandwidth and the 32 to 38 GHz range, the opportunity was clearly aimed at next-generation RF front-end components that can support agile, high-performance systems, including applications where small size, high power, and broad instantaneous bandwidth provide operational advantages.
Administratively, this opportunity was posted March 7, 2012, with an application closing date of April 23, 2012, and it was later archived on May 23, 2012. It was offered as a discretionary award using a cooperative agreement, which typically indicates that the government expected substantial involvement during the execution of the project (for example, through technical coordination, milestones, and active program management), rather than a hands-off grant structure. The funding activity category was listed as science and technology and other research and development, and it was associated with CFDA 12.800, the Air Force Defense Research Sciences Program.
The announcement anticipated a single award (ExpectedAwards: 1) with an estimated total funding level of $8.5 million. A cost-sharing or matching requirement applied, signaling that the recipient would need to contribute its own resources alongside the government funds, which is common for industrial base expansion efforts intended to lead to sustainable, commercial-like production rather than one-off prototypes. Eligibility was described as unrestricted, meaning any type of entity could apply, subject to any additional eligibility clarifications in the full text of the announcement.
The point of the project, taken as a whole, was not simply to demonstrate a laboratory process, but to create a repeatable, usable manufacturing capability that outside designers could reliably access. By building an open, merchant foundry model with a mature PDK and 100 mm GaN-on-SiC production for 32 to 38 GHz MMICs, the Air Force aimed to strengthen domestic supply, reduce dependence on limited or closed sources, and enable more rapid and competitive development of advanced EW RF components across government and industry users. For access issues or administrative questions, the contact listed was Laura Ortiz, Agreements Negotiator, at (937) 656-9883.
Frequently Asked Questions (FAQ)
What was the GaN on SiC Advanced EW MMIC Production Capacity Project?
It was a U.S. Air Force Research Laboratory (AFRL) funding opportunity under the Defense Production Act (DPA) Title III program focused on expanding the domestic manufacturing base for advanced microwave chips used in electronic warfare (EW).
What was the main goal of this funding opportunity?
The central goal was to establish a U.S.-based, economically viable production capability for high-frequency, wide-bandwidth monolithic microwave integrated circuits (MMICs) operating in the 32 to 38 GHz range.
What type of chips were targeted?
The project targeted high-frequency, wide-bandwidth MMICs intended for electronic warfare (EW) applications, specifically designed to operate across 32 to 38 GHz.
What frequency range did the MMICs need to support?
The solicitation targeted MMIC operation in the 32 to 38 GHz range.
What materials and technology platform were required?
The opportunity focused on gallium nitride (GaN) epitaxy grown on silicon carbide (SiC) substrates, commonly referred to as GaN-on-SiC.
What wafer size was specified, and why did it matter?
The project emphasized manufacturing using 100 mm (4-inch) SiC wafers. Wafer size matters because it is closely tied to throughput, cost, and overall manufacturing maturity.
Why was GaN-on-SiC chosen for this effort?
GaN-on-SiC is widely valued for high-power, high-frequency RF applications. GaN devices can support high power densities and perform effectively at microwave and millimeter-wave frequencies, while SiC substrates provide strong thermal conductivity and power handling, which are important for demanding EW environments.
Was the intent research-only, or production capability?
The intent was to create a repeatable, usable manufacturing capability, not just a laboratory demonstration. The goal was a production-ready capability that outside designers could reliably use.
What does it mean that the capability had to operate as an "open foundry" merchant supplier?
It meant the awardee was expected to offer its fabrication process to outside organizations, not only to internal product lines. External customers would be able to design and manufacture their own chips using the foundry's qualified process.
What was a key sign that the foundry would be truly "open"?
The solicitation highlighted the availability of a robust process design kit (PDK) as an important indicator of an open foundry.
What is a Process Design Kit (PDK) in the context of this opportunity?
The PDK was described as the bridge between manufacturing and design. It captures design rules, device models, layout constraints, and process details to enable external designers to produce working chips with minimal redesign cycles, ideally achieving acceptable performance on the first fabrication run.
What kinds of applications were implied by the 32 to 38 GHz wide-bandwidth focus?
The emphasis indicated a focus on next-generation RF front-end components supporting agile, high-performance systems. The description pointed to cases where small size, high power, and broad instantaneous bandwidth provide operational advantages, particularly in EW-related environments.
Which government organization issued the opportunity?
The opportunity was issued by the U.S. Air Force Research Laboratory (AFRL).
What program authority supported this opportunity?
The opportunity was issued under the Defense Production Act (DPA) Title III program.
What was the award instrument type?
It was offered as a cooperative agreement under a discretionary award structure.
What does a cooperative agreement imply for project execution?
A cooperative agreement typically indicates the government expected substantial involvement during execution, such as technical coordination, milestones, and active program management, rather than a hands-off grant structure.
How many awards were anticipated?
The announcement anticipated a single award (ExpectedAwards: 1).
What was the estimated total funding level?
The estimated total funding level was $8.5 million.
Was cost sharing or matching required?
Yes. A cost-sharing or matching requirement applied, meaning the recipient would need to contribute its own resources alongside government funding.
Why would cost sharing be part of this type of opportunity?
The description indicated the effort was an industrial base expansion intended to lead to sustainable, commercial-like production rather than one-off prototypes, and cost sharing is common in that context.
Who was eligible to apply?
Eligibility was described as unrestricted, meaning any type of entity could apply, subject to any additional eligibility clarifications in the full announcement text.
What was the funding activity category?
The funding activity category was listed as science and technology and other research and development.
What CFDA program was associated with this opportunity?
The opportunity was associated with CFDA 12.800, the Air Force Defense Research Sciences Program.
When was the opportunity posted?
It was posted on March 7, 2012.
What was the application closing date?
The application closing date was April 23, 2012.
When was the opportunity archived?
It was later archived on May 23, 2012.
What broader problem was this project trying to solve?
The opportunity aimed to strengthen domestic supply, reduce dependence on limited or closed sources, and enable faster and more competitive development of advanced EW RF components across government and industry users.
Who was the listed point of contact for access issues or administrative questions?
The contact listed was Laura Ortiz, Agreements Negotiator.
How could the point of contact be reached?
Laura Ortiz could be reached by phone at (937) 656-9883.
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