Opportunity Information: Apply for DARPA BAA 09 16
Apply for DARPA BAA 09 16
- The DARPA Microsystems Technology Office in the science and technology and other research and development sector is offering a public funding opportunity titled "Nitride Electronic NeXt Generation Technology (NEXT)" and is now available to receive applicants.
- Interested and eligible applicants and submit their applications by referencing the CFDA number(s): 12.910 Research and Technology Development.
- This funding opportunity was created on Jan 27, 2009 and posted on Nov 19, 2008.
- Applicants must submit their applications by Nov 19, 2009 Dates Posting Date November 19, 2008 Industry Day December 3, 2008 Proposal Abstract Due Date December 19, 2008 Proposal Due Date February 24, 2009. (Agency may still review applications by suitable applicants for the remaining/unused allocated funding in 2026.)
- Eligible applicants include: Unrestricted (i.e., open to any type of entity above), subject to any clarification in text field entitled Additional Information on Eligibility.
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Opportunity Summary:
The Nitride Electronic NeXt Generation Technology (NEXT) opportunity is a DARPA Microsystems Technology Office Broad Agency Announcement (BAA) focused on pushing nitride-based electronics beyond incremental improvements and into genuinely disruptive performance territory. The core technical aim is to fund innovative research on advanced nitride electronic devices and integrated circuits that can operate at very high frequencies while still preserving exceptionally strong voltage breakdown behavior. In practical terms, DARPA is looking for approaches that change what is possible in high-frequency, high-power electronics, rather than proposals that simply refine today s gallium nitride (GaN) or related nitride technologies with modest, evolutionary gains.
A key feature of the announcement is the explicit exclusion of work that mainly produces evolutionary improvements to the existing state of practice. That means the program is not intended to fund routine device scaling, standard process tweaks, or straightforward optimizations that only incrementally increase output power, efficiency, or frequency response. Instead, NEXT is positioned for high-risk, high-payoff concepts: novel device architectures, new materials or heterostructure concepts within the nitride family, breakthrough integration strategies for nitride ICs, or other unconventional paths that could deliver step-change improvements in frequency performance without sacrificing breakdown voltage characteristics. The emphasis on maintaining favorable breakdown while going to very high frequency signals a desire to overcome the classic trade space where improving one often degrades the other.
Administratively, this is listed as a discretionary funding opportunity under Funding Opportunity Number DARPA BAA 09 16, with the title Nitride Electronic NeXt Generation Technology (NEXT). The solicitation supports multiple possible award instruments, including cooperative agreements, grants, other transactions, and procurement contracts, indicating DARPA s flexibility in how it structures awards depending on the proposer, the work scope, and the nature of collaboration and oversight required. The activity category is science and technology and other research and development, and the CFDA listing is 12.910 (Research and Technology Development). There is no cost sharing or matching requirement stated.
The announcement includes an amendment (Amendment 01) that updates the proposal due date. Originally, the full proposal due date was set for February 17, 2009, but the amendment revises it to February 24, 2009. The schedule also lists an Industry Day held on December 3, 2008, and it provides two slightly different abstract due dates across the listing (December 17, 2008 in the earlier schedule and December 19, 2008 in the updated schedule shown alongside the amended dates). The posting date is November 19, 2008, with an archive date of December 14, 2009. Although the listing shows a Current Closing Date of November 19, 2009, the critical actionable deadline for submitting a proposal under the amended notice is the February 24, 2009 proposal due date.
Eligibility is described as unrestricted, meaning any type of entity may apply (for example, companies, universities, nonprofit research organizations, and others), subject to any additional eligibility language contained in the full BAA text. The award ceiling and floor are both shown as 0 in the summary data, which typically indicates that specific funding ranges are not defined in the public synopsis and that proposers should consult the full BAA for funding expectations, structure, and any topic-specific guidance.
For communications and submissions guidance, DARPA directs administrative correspondence and questions to the email address BAA09 16@darpa.mil, including requests for information on submitting a proposal abstract or full proposal. The point of contact for difficulties accessing the full announcement electronically is Dr. Mark Rosker (mark.rosker@darpa.mil). The solicitation is managed through DARPA s Microsystems Technology Office, with the physical mailing reference listed as DARPA/MTO, ATTN BAA 09 16, 3701 North Fairfax Drive, Arlington, VA 22203-1714, with a BAA Coordinator also referenced.
Overall, NEXT is a DARPA effort aimed at catalyzing breakthroughs in nitride electronics that combine very high frequency operation with strong breakdown performance, and it is structured to attract bold, non-traditional ideas rather than incremental extensions of existing GaN device and IC technologies.
Frequently Asked Questions (FAQs): Nitride Electronic NeXt Generation Technology (NEXT) - DARPA BAA 09-16
1) What is the NEXT opportunity (DARPA BAA 09-16)?
Nitride Electronic NeXt Generation Technology (NEXT) is a DARPA Microsystems Technology Office (MTO) Broad Agency Announcement (BAA) focused on research and development in advanced nitride-based electronic devices and integrated circuits. The program is intended to push nitride electronics beyond incremental improvements and into genuinely disruptive performance gains.
2) What technical problem is NEXT trying to solve?
NEXT targets breakthrough approaches that enable very high-frequency operation while preserving exceptionally strong voltage breakdown behavior. The program emphasizes overcoming the common trade-off where improving frequency performance can degrade breakdown characteristics (or vice versa).
3) What types of research does NEXT want to fund?
The opportunity seeks high-risk, high-payoff concepts in nitride electronics, such as novel device architectures, new nitride-family materials or heterostructure concepts, and breakthrough integration strategies for nitride integrated circuits (ICs). The goal is step-change performance rather than modest refinements.
4) What research is explicitly not intended to be funded under NEXT?
The announcement explicitly excludes work that mainly produces evolutionary improvements to the existing state of practice. Examples described include routine device scaling, standard process tweaks, and straightforward optimizations that only incrementally improve output power, efficiency, or frequency response.
5) Is this focused only on gallium nitride (GaN)?
The description references today's GaN and related nitride technologies as the current baseline. NEXT is positioned to fund unconventional or novel approaches within the nitride family (including new materials or heterostructure concepts), rather than incremental extensions of existing GaN practice.
6) What office at DARPA is managing this opportunity?
The solicitation is managed through DARPA's Microsystems Technology Office (MTO).
7) What is the Funding Opportunity Number and title?
The Funding Opportunity Number is DARPA BAA 09-16, and the title is Nitride Electronic NeXt Generation Technology (NEXT).
8) What award instruments may be used?
The solicitation supports multiple possible award instruments, including cooperative agreements, grants, other transactions, and procurement contracts. This indicates DARPA may structure awards differently depending on the proposer, the scope of work, and collaboration and oversight needs.
9) What is the activity category and CFDA listing?
The activity category is science and technology and other research and development. The CFDA listing provided is 12.910 (Research and Technology Development).
10) Is cost sharing or matching required?
No cost sharing or matching requirement is stated in the provided summary information.
11) Who is eligible to apply?
Eligibility is described as unrestricted, meaning any type of entity may apply (for example, companies, universities, nonprofit research organizations, and others), subject to any additional eligibility language in the full BAA.
12) What are the key dates listed for this opportunity?
The posting date is November 19, 2008. An Industry Day is listed as December 3, 2008. The opportunity includes abstract due dates shown as December 17, 2008 in an earlier schedule and December 19, 2008 in an updated schedule displayed alongside amended dates. The full proposal due date was originally February 17, 2009 and was revised by Amendment 01 to February 24, 2009. The archive date is December 14, 2009.
13) What did Amendment 01 change?
Amendment 01 updated the full proposal due date. The original due date of February 17, 2009 was revised to February 24, 2009.
14) There is a "Current Closing Date" shown as November 19, 2009. Which deadline matters for proposal submission?
Based on the provided information, the actionable deadline for submitting a proposal under the amended notice is the February 24, 2009 full proposal due date. The listing also shows a Current Closing Date of November 19, 2009, but the critical proposal due date identified in the amendment is February 24, 2009.
15) Why are there two different abstract due dates shown?
The listing shows two slightly different abstract due dates across the schedule information: December 17, 2008 in an earlier schedule and December 19, 2008 in the updated schedule shown alongside the amended dates.
16) Where should administrative questions or submission-related questions be sent?
DARPA directs administrative correspondence and questions (including requests for information on submitting a proposal abstract or full proposal) to BAA09-16@darpa.mil.
17) Who should be contacted if there are problems accessing the full announcement electronically?
The point of contact for difficulties accessing the full announcement electronically is Dr. Mark Rosker at mark.rosker@darpa.mil.
18) Is there a physical mailing reference associated with the BAA?
Yes. The physical mailing reference is listed as DARPA/MTO, ATTN BAA 09-16, 3701 North Fairfax Drive, Arlington, VA 22203-1714. A BAA Coordinator is also referenced in the listing.
19) Is a funding amount range provided in the synopsis?
The award ceiling and award floor are both shown as 0 in the summary data. This typically indicates specific funding ranges are not defined in the public synopsis and that funding expectations and structure should be confirmed in the full BAA.
20) What is the overall purpose of NEXT in plain terms?
NEXT is intended to catalyze breakthroughs in nitride electronics that deliver very high-frequency performance without giving up strong breakdown voltage characteristics, and to attract bold, non-traditional ideas rather than incremental extensions of existing nitride (including GaN) device and IC technology.
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