Opportunity Information: Apply for PD 10 031
Apply for PD 10 031
- The National Science Foundation in the science and technology and other research and development sector is offering a public funding opportunity titled "NSF NRI Graduate Student and Postdoctoral Fellow Supplements to NSF Centers in Nanoelectronics (NSF 10 031)" and is now available to receive applicants.
- Interested and eligible applicants and submit their applications by referencing the CFDA number(s): 47.041 Engineering Grants 47.049 Mathematical and Physical Sciences 47.070 Computer and Information Science and Engineering.
- This funding opportunity was created on Apr 1, 2010 and posted on Apr 1, 2010.
- Applicants must submit their applications by May 10, 2010 Supplement Due Date(s) (due by 5 p.m. proposers local time) May 10, 2010. (Agency may still review applications by suitable applicants for the remaining/unused allocated funding in 2026.)
- Eligible applicants include: Unrestricted (i.e., open to any type of entity above), subject to any clarification in text field entitled Additional Information on Eligibility.
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Opportunity Summary:
NSF PD 10-031 is a supplemental funding opportunity tied to existing NSF-funded nanoelectronics centers, created through a cooperative effort between the National Science Foundation (NSF) and the Semiconductor Industry Association (SIA) via the Nanoelectronics Research Initiative (NRI). Rather than funding brand-new standalone projects, the intent is to add targeted support to ongoing, long-term center research by providing funds specifically to bring in additional graduate students and postdoctoral fellows. These trainees are expected to work in a collaborative setting that includes participating NRI company assignees, strengthening day-to-day links between university-based center research and industry perspectives on what is needed next in nanoelectronics.
The core motivation behind the program is the growing difficulty of continuing performance gains through traditional CMOS scaling. As CMOS approaches fundamental scaling limits, power density and heat become dominant constraints, making it harder to improve speed and efficiency simply by shrinking transistors. This supplement program is designed to push beyond that roadmap by encouraging exploratory, high-impact work on concepts that could succeed CMOS. In practical terms, the supplements aim to accelerate research and education in nanoelectronics, deepen industry partnerships with NSF centers, and help develop a pipeline of researchers who can move between academia and industry and lead future advances.
A key eligibility and fit requirement is alignment in two directions at once. First, the proposed supplement work must be consistent with the mission and goals of the NSF center that would receive the supplement. Second, it must align with NRI goals, especially the search for a novel logic switch that is not based on a field-effect transistor (non-FET) and could serve as a successor to CMOS. NRI emphasizes device and computing concepts that rely on computational state variables other than the conventional FET approach of controlling electronic charge using an electrostatic potential barrier. In other words, the program is looking for credible paths to computation that are not just incremental improvements to the standard transistor paradigm.
Within that broad non-FET direction, NRI highlighted three topical areas of particular interest for this supplement cycle. The first is circuit architectures that can actually perform computation using non-FET devices, recognizing that new devices often require new ways of building logic and systems around them. The second is directed self-assembly and bottom-up fabrication approaches aimed at constructing specific non-FET device structures, reflecting the need for manufacturing-relevant pathways to build nanoscale features and organized device arrays. The third is nanoengineering of phonon flow in non-FET devices and circuits, focusing on heat control, thermal transport, and potentially enabling non-equilibrium behavior. This thermal emphasis ties directly to the scaling bottleneck: because increasing power density is the primary limitation to continued scaling, proposed devices and architectures are expected to focus on achieving low energy consumption while maintaining high computational speed.
Administratively, the opportunity is structured as a discretionary NSF grant supplement mechanism (not a cost-sharing program) and is listed under multiple NSF CFDA areas, including Engineering (47.041), Mathematical and Physical Sciences (47.049), and Computer and Information Science and Engineering (47.070), reflecting the multidisciplinary nature of nanoelectronics research. The posting date was April 1, 2010, with a supplement due date of May 10, 2010 (by 5 p.m. local time). The listing shows expected awards and estimated total funding as 0, which typically indicates that awards are contingent on available funds and qualifying supplement requests rather than a fixed, pre-announced pool in the public synopsis. Eligibility is described as unrestricted in the synopsis, but in practice the text makes clear the supplements are meant for NSF centers engaged in long-term nanoelectronics research that can host the graduate student or postdoc work in collaboration with NRI industry assignees. Additional program details were provided through a related Dear Colleague Letter (NSF 10-013), and examples of prior supplement awards were made available through NSF nano-related award listings. Contact support for access issues is routed through NSF’s grants.gov support channel.
Frequently Asked Questions (FAQs) - NSF PD 10-031 Supplemental Funding Opportunity
What is NSF PD 10-031?
NSF PD 10-031 is a discretionary supplemental funding opportunity from the National Science Foundation (NSF). It is tied to existing NSF-funded nanoelectronics centers and was created through a cooperative effort between NSF and the Semiconductor Industry Association (SIA) via the Nanoelectronics Research Initiative (NRI).
Is this opportunity for brand-new projects or existing NSF awards?
This opportunity is for supplements to ongoing, long-term center research supported by NSF. It is not intended to fund brand-new standalone projects; instead, it adds targeted support to work already being conducted within eligible NSF nanoelectronics centers.
What is the main purpose of these supplements?
The supplements are intended to strengthen and accelerate center research and education in nanoelectronics by providing additional funds specifically to support added graduate students and postdoctoral fellows. The goal is also to deepen day-to-day links between university-based center research and industry perspectives through collaboration with NRI company assignees.
What types of costs or activities are these supplemental funds meant to support?
Based on the description, the supplemental funds are specifically aimed at bringing in additional graduate students and postdoctoral fellows who will contribute to the center's research in a collaborative environment involving NRI industry assignees.
Why was this supplement program created (what problem is it trying to address)?
The program is motivated by the growing difficulty of continuing performance gains through traditional CMOS scaling. As CMOS approaches fundamental scaling limits, power density and heat become dominant constraints, making it harder to improve speed and efficiency simply by shrinking transistors. The supplements are designed to encourage exploratory, high-impact work on concepts that could succeed CMOS.
How does this opportunity connect NSF and industry?
The opportunity is part of a cooperative effort between NSF and SIA through NRI. Trainees supported by the supplement are expected to work in a collaborative setting that includes participating NRI company assignees, strengthening practical, day-to-day connections between academic center research and industry views on future nanoelectronics needs.
What is the key research direction this program is looking for?
A central requirement is alignment with NRI goals, particularly the search for a novel logic switch that is not based on a field-effect transistor (a non-FET approach) and could serve as a successor to CMOS. NRI emphasizes device and computing concepts that use computational state variables other than the conventional FET method of controlling electronic charge using an electrostatic potential barrier.
Does the supplement support incremental improvements to conventional transistors?
The description emphasizes credible paths to computation that are not just incremental improvements to the standard transistor paradigm. The stated focus is on non-FET logic switch concepts that could succeed CMOS.
What does "alignment in two directions at once" mean for a supplement request?
The proposed supplemental work must align in two ways: (1) it must be consistent with the mission and goals of the NSF center that would receive the supplement, and (2) it must align with NRI goals, especially work aimed at non-FET successor concepts to CMOS.
What topical areas were highlighted as priorities for this supplement cycle?
NRI highlighted three areas of particular interest:
- Circuit architectures that can perform computation using non-FET devices.
- Directed self-assembly and bottom-up fabrication approaches aimed at constructing specific non-FET device structures.
- Nanoengineering of phonon flow in non-FET devices and circuits, with emphasis on heat control, thermal transport, and potentially enabling non-equilibrium behavior.
Why is thermal management and power emphasized in the research scope?
The opportunity ties thermal considerations directly to the CMOS scaling bottleneck: increasing power density is described as the primary limitation to continued scaling. Proposed devices and architectures are therefore expected to focus on achieving low energy consumption while maintaining high computational speed.
Who is the intended participant group supported by the supplement?
The opportunity specifically targets support for additional graduate students and postdoctoral fellows (trainees) who will work within NSF nanoelectronics centers in collaboration with NRI industry assignees.
What kind of research environment is expected for trainees funded under this supplement?
Trainees are expected to work in a collaborative setting that includes participating NRI company assignees. This is meant to strengthen the day-to-day linkage between university-based center research and industry perspectives.
Is this a cost-sharing program?
No. The opportunity is described as a discretionary NSF grant supplement mechanism and explicitly notes that it is not a cost-sharing program.
Which NSF program areas or disciplines does this opportunity relate to?
The opportunity is listed under multiple NSF CFDA areas, reflecting its multidisciplinary nature, including:
- Engineering (47.041)
- Mathematical and Physical Sciences (47.049)
- Computer and Information Science and Engineering (47.070)
What were the key dates for this opportunity?
The posting date was April 1, 2010. The supplement due date was May 10, 2010, by 5 p.m. local time.
The listing shows expected awards and total funding as 0. What does that indicate?
The synopsis shows expected awards and estimated total funding as 0. Based on the description provided, this typically indicates that awards are contingent on available funds and qualifying supplement requests rather than a fixed, pre-announced funding pool in the public listing.
Who is eligible to apply?
The synopsis describes eligibility as unrestricted. However, the program description makes clear that the supplements are intended for NSF centers engaged in long-term nanoelectronics research that can host graduate student or postdoctoral work in collaboration with NRI industry assignees.
What additional documents were referenced for more details?
Additional program details were provided through a related Dear Colleague Letter (NSF 10-013). The description also notes that examples of prior supplement awards were available through NSF nano-related award listings.
Where is support directed for access issues related to applying?
Contact support for access issues is routed through NSF's grants.gov support channel.
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