Spin Torque Transfer Random Access Memory (STT RAM) | Apply Online

Frequently Asked Questions (FAQs)

What is this funding opportunity?

This opportunity is DARPA Microsystems Technology Office (MTO) Broad Agency Announcement (BAA) BAA08-16. It is a discretionary research and development (R&D) funding opportunity focused on advancing Spin Torque Transfer Random Access Memory (STT-RAM) toward practical, large-scale use.

What is the main goal of BAA08-16?

The goal is to fund high-risk, high-payoff research intended to make STT-RAM practical at large scale by pushing beyond conventional memory tradeoffs. DARPA describes this as work toward a "universal memory element" that can combine very high density, fast read/write, non-volatility, and straightforward integration with standard CMOS semiconductor manufacturing.

What does DARPA mean by a "universal memory element" in this announcement?

In the context provided, a "universal memory element" is a memory technology that aims to deliver multiple properties that typically do not coexist in one approach: scalability to very high density, fast read and write speed, non-volatility (data retention without power), and ease of integration into standard CMOS manufacturing flows.

Is DARPA looking for incremental improvements to existing MRAM?

No. The announcement explicitly states that the program is not looking for incremental tuning of existing MRAM approaches. It calls for innovative, potentially revolutionary advances in underlying science, device structures, materials, and manufacturing processes.

What technical areas are emphasized?

DARPA emphasizes the "core technology" needed to exploit STT and related phenomena to produce large-scale memory arrays. The opportunity highlights work spanning materials discovery and engineering, device physics and reliability, and fabrication processes that are stable and compatible with mainstream semiconductor electronics and patterned media.

Does the program focus on full memory arrays or isolated device demonstrations?

The stated focus is on enabling large-scale memory arrays, not just isolated lab demonstrations. Proposals are expected to address pathways and constraints between demonstrating an STT effect in a device and delivering a manufacturable, high-yield, high-performance memory technology.

Why is CMOS compatibility important in this announcement?

Compatibility with expected commercial process flows is treated as a key attribute because it increases the likelihood that early demonstrations can be scaled and adopted more broadly. The announcement emphasizes integration with standard CMOS semiconductor manufacturing as part of the desired "universal memory" set of properties.

What is Spin Torque Transfer (STT) in the context of this opportunity?

STT is described as an effect where a spin-polarized current can electrically switch a magnetic layer's orientation, potentially enabling memory cells that are dense, fast, and durable. The announcement cites Science 285, 867 (1999) in connection with STT as a newer effect relative to earlier magnetics/spintronics breakthroughs.

How does this relate to prior breakthroughs like GMR and MTJs?

The opportunity is grounded in progress from magnetics and spintronics. It references giant magnetoresistance (GMR) as enabling major improvements in magnetic disk drives and magnetic tunnel junctions (MTJs) as enabling MRAM, positioning STT as a subsequent effect that could further advance memory technology.

What potential advantages does DARPA highlight for defense and aerospace applications?

DARPA notes that STT-based components could be attractive for defense and aerospace due to high endurance and suitability for harsh environments, including resistance to ionizing radiation.

Does DARPA mention any system-level benefits beyond the memory cell itself?

Yes. The announcement highlights simplified power and support circuitry as a system-level advantage, noting that such devices can operate from a single supply voltage.

What kinds of research outcomes does DARPA appear to want?

Based on the description provided, DARPA wants breakthroughs that address not only device concepts but also manufacturability factors such as stable fabrication processes, reliability, and compatibility with mainstream semiconductor manufacturing. The intent is to move toward scalable, high-yield, high-performance memory technology rather than purely academic proofs of concept.

What is the CFDA number and program category listed?

The announcement is listed under CFDA 12.910, Research and Technology Development.

Who is eligible to apply?

The listing states the opportunity is open to unrestricted applicants (any entity type), subject to any additional eligibility language in the full announcement.

What funding instrument types may DARPA use for awards?

DARPA indicates that awards could be made through multiple instrument types, including grants, cooperative agreements, contracts, and other transactions.

When was this opportunity posted and when did it close?

The posting date was February 26, 2008. The original and current closing date shown is April 11, 2008.

Is this opportunity still active?

No. The opportunity was later archived on January 9, 2009.

Why do the award floor and ceiling show as 0?

The listing shows an award floor and ceiling of 0, which typically indicates that funding levels are not specified in the summary. The amount may be detailed in the full BAA or determined based on the proposed scope and available funds, as implied by the summary information provided.

Where should administrative questions or proposal logistics questions be sent?

DARPA directs administrative correspondence and proposal submission logistics inquiries to BAA08-16@darpa.mil.

What should applicants do if they have trouble accessing the full solicitation electronically?

The announcement notes that if there are problems accessing the full solicitation electronically, applicants can contact the program manager through the BAA email address (BAA08-16@darpa.mil).

Is a program manager named in the announcement?

Yes. The notice names Devanand Shenoy (DARPA/MTO) and indicates contact should be made through the BAA email address.

Where are the full materials referenced?

The announcement references the DARPA MTO solicitations website for the full materials.